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Kerry Dunn

MSC Student

Université du Québec
Institut national de la recherche scientifique
Énergie, Matériaux et Télécommunications
1650, boulevard Lionel-Boulet
Varennes, Québec, Canada
J3X 1S2

 
Photoluminescent nanostructures by pulsed laser deposition

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Recently much work had been dedicated to research into silicon nanocrystals and their optical properties due to quantum confinement effects. Silicon is ubiquitous in the electronics industry but features an indirect band-gap in bulk which is not conducive to light absorption or production. Silicon nanocrystals on the other hand are known to exhibit significant photoluminescence where the emitted wavelength is proportional to the nanocrystals dimensions. These nanostructured materials have been investigated for use in waveguides and various photovoltaic devices where luminescence either originates from, or is enhanced by the presence of nanocrystals. A number of synthesis methods have been demonstrated and explored for example, chemical vapour deposition, molecular beam epitaxy and co-sputtering. Reactive pulsed laser deposition in particular represents a flexible approach to nanocrystal synthesis which results in silicon nanocrystals with minimal size distribution embedded in an amorphous silicon oxide matrix. Because of the flexibility of the method, PLD is a useful tool for investigations both into the luminescent and non- luminescent recombination mechanisms involved and into the optimisation of fabrication procedures for nanostructured optical devices.