| PHD Student
Université du Québec
Institut national de la recherche scientifique
Énergie, Matériaux et Télécommunications
1650, boulevard Lionel-Boulet
Varennes, Québec, Canada
J3X 1S2
Telephone: +1 (514) 228-6900
Fax: +1 (450) 929-8102
kadari@emt.inrs.ca
www.emt.inrs.ca
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The project aims to bring novelty in the field of advanced functional
materials suitable for light emitting sources with low energy consumption,
high luminescence intensity and low heat emission. Targeted materials
are silicon nanocrystals (Si-nc) formed in insulating matrix (Si3N4, SiO2
or SiC) and rare earth doped thin silica films.
Silicon is known to be with indirect bandgap, but once at nanometric scale,
it becomes photoluminescent in the visible – near infrared range.
The origin of the photoluminescence is mainly due to quantum confinement
effect with contribution of surface states and spatial confinement resulting
in broadening of the emitted spectrum. Doping with rare-earth elements
increases the efficiency of the luminescence.
Our research is oriented towards optimization of the parameters of manufacturing
of luminescent components with high performance, high efficiency and low
cost of production. To achieve this objective we will investigate the
strain states surrounding the individual Si-nc and the SiO2 layers doped
with rare earth, which will bring a new insight into the behaviour of
stress during the manufacturing process and deduce relationships when
applying strong electric fields. Understanding and controlling the strain
stress will help to increase the lifetime of the components. In addition,
by reducing of the non-radiative recombination sites, the efficiency of
components will be improved. We will make quantitative measurements of
stress at critical spatial dimension of the order of tens of nanometers
by linear polarization of X-ray absorption (XAS) signals in an X-ray photoemission
electron microscope (X-PEEM).
The project is in collaboration with McMaster University and Group IV
Semiconductor Inc
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